Techniques for Aging, Soft Errors and Temperature to Increase the Reliability of Embedded On-Chip Systems

This thesis investigates the challenge of providing an abstracted, yet sufficiently accurate reliability estimation for embedded on-chip systems. In addition, it also proposes new techniques to increase the reliability of register files within processors against aging effects and soft errors. It also introduces a novel thermal measurement setup that perspicuously captures the infrared images of modern multi-core processors

Design automation of approximate circuits with runtime reconfigurable accuracy

Leveraging the inherent error tolerance of a vast number of application domains that are rapidly growing, approximate computing arises as a design alternative to improve the efficiency of our computing systems by trading accuracy for energy savings. However, the requirement for computational accuracy is not fixed. Controlling the applied level of approximation dynamically at runtime is a key to effectively optimize energy, while still containing and bounding the induced errors at runtime. In this paper, we propose and implement an automatic and circuit independent design framework that generates approximate circuits with dynamically reconfigurable accuracy at runtime. The generated circuits feature varying accuracy levels, supporting also accurate execution. Extensive experimental evaluation, using industry strength flow and circuits, demonstrates that our generated approximate circuits improve the energy by up to 41% for 2% error bound and by 17.5% on average under a pessimistic scenario that assumes full accuracy requirement in the 33% of the runtime. To demonstrate further the efficiency of our framework, we considered two state-of-the-art technology libraries which are a 7nm conventional FinFET and an emerging technology that boosts performance at a high cost of increased dynamic power

Brain-Inspired Hyperdimensional Computing: How Thermal-Friendly for Edge Computing?

Brain-inspired hyperdimensional computing (HDC) is an emerging machine learning (ML) methods. It is based on large vectors of binary or bipolar symbols and a few simple mathematical operations. The promise of HDC is a highly efficient implementation for embedded systems like wearables. While fast implementations have been presented, other constraints have not been considered for edge computing. In this work, we aim at answering how thermal-friendly HDC for edge computing is. Devices like smartwatches, smart glasses, or even mobile systems have a restrictive cooling budget due to their limited volume. Although HDC operations are simple, the vectors are large, resulting in a high number of CPU operations and thus a heavy load on the entire system potentially causing temperature violations. In this work, the impact of HDC on the chip's temperature is investigated for the first time. We measure the temperature and power consumption of a commercial embedded system and compare HDC with conventional CNN. We reveal that HDC causes up to 6.8{\deg}C higher temperatures and leads to up to 47% more CPU throttling. Even when both HDC and CNN aim for the same throughput (i.e., perform a similar number of classifications per second), HDC still causes higher on-chip temperatures due to the larger power consumption.Comment: 4 pages, 3 figure

Energy Optimization in NCFET-based Processors

Energy consumption is a key optimization goal for all modern processors. Negative Capacitance Field-Effect Transistors (NCFETs) are a leading emerging technology that promises outstanding performance in addition to better energy efficiency. Thickness of the additional ferroelectric layer, frequency, and voltage are the key parameters in NCFET technology that impact the power and frequency of processors. However, their joint impact on energy optimization has not been investigated yet.In this work, we are the first to demonstrate that conventional (i.e., NCFET-unaware) dynamic voltage/frequency scaling (DVFS) techniques to minimize energy are sub-optimal when applied to NCFET-based processors. We further demonstrate that state-of-the-art NCFET-aware voltage scaling for power minimization is also sub-optimal when it comes to energy. This work provides the first NCFET-aware DVFS technique that optimizes the processor\u27s energy through optimal runtime frequency/voltage selection. In NCFETs, energy-optimal frequency and voltage are dependent on the workload and technology parameters. Our NCFET-aware DVFS technique considers these effects to perform optimal voltage/frequency selection at runtime depending on workload characteristics. Results show up to 90 % energy savings compared to conventional DVFS techniques. Compared to state-of-the-art NCFET-aware power management, our technique provides up to 72 % energy savings along with 3.7x higher performance

Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs

Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for implementing TCAM owing to their high ON/OFF ratio, non-volatility, and CMOS compatibility. However, conventional single-gate FeFETs (SG-FeFETs) suffer from relatively high write voltage, low endurance, potential read disturbance, and face scaling challenges. Recently, a double-gate FeFET (DG-FeFET) has been proposed and outperforms SG-FeFETs in many aspects. This paper investigates TCAM design challenges specific to DG-FeFETs and introduces a novel 1.5T1Fe TCAM design based on DG-FeFETs. A 2-step search with early termination is employed to reduce the cell area and improve energy efficiency. A shared driver design is proposed to reduce the peripherals area. Detailed analysis and SPICE simulation show that the 1.5T1Fe DG-TCAM leads to superior search speed and energy efficiency. The 1.5T1Fe TCAM design can also be built with SG-FeFETs, which achieve search latency and energy improvement compared with 2FeFET TCAM.Comment: Accepted by Design Automation Conference (DAC) 202

On the Critical Role of Ferroelectric Thickness for Negative Capacitance Device-Circuit Interaction

This paper demonstrates the critical role that Ferroelectric (FE) layer thickness (tFE) plays in Negative Capacitance (NC) transistors connecting device and circuit levels together. The study is done through fully-calibrated TCAD simulations for a 14nm FDSOI technology node, exploring the impact of tFE on the figures of merit of n-type and p-type devices, voltage transfer characteristic (VTC) and noise margin of inverter as well as the speed of buffer circuits. First, we analyze the device electrical parameters (e.g., ION, SS, ION/IOFF and Cgg) by varying tFE up to the maximum level at which hysteresis in the I-V characteristic starts. Then, we analyze the deleterious impact of Negative Differential Resistance (NDR), due to the drain to gate coupling, demonstrating how it imposes an additional constraint limiting the maximum tFE. We show the consequences of NDR effects on the VTC and noise margin of inverter, which are essential components for constructing robust clock trees in any chip. We demonstrate how the considerable increase in the gate’s capacitance due to FE seriously degrades the circuit’s performance imposing further constraints limiting the maximum tFE. Further, we analyze the impact of tFE on the SRAM cell static performance metrics such hold noise margin (HNM), read noise margin (RNM) and write noise margin (WNM) at supply voltages of 0.7V and 0.4V. We demonstrate that the HNM and RNM in a NC-FDSOI FET based SRAM cell are higher then those of the baseline FDSOI FET based SRAM cell noise margin and further increase with tFE. However, the WNM in general follows a non monotonic trend w.r.t tFE, and the trend also depends on the supply voltage. Finally, we optimize the design of the SRAM cell considering overall performance metrics. All in all, our analysis provides guidance for device and circuit designers to select the optimal FE thickness for NCFETs in which hysteresis-free operations, reliability, and performance are optimized

Printed temperature sensor array for high-resolution thermal mapping

Fully-printed temperature sensor arrays—based on a flexible substrate and featuring a high spatial-temperature resolution—are immensely advantageous across a host of disciplines. These range from healthcare, quality and environmental monitoring to emerging technologies, such as artificial skins in soft robotics. Other noteworthy applications extend to the fields of power electronics and microelectronics, particularly thermal management for multi-core processor chips. However, the scope of temperature sensors is currently hindered by costly and complex manufacturing processes. Meanwhile, printed versions are rife with challenges pertaining to array size and sensor density. In this paper, we present a passive matrix sensor design consisting of two separate silver electrodes that sandwich one layer of sensing material, composed of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). This results in appreciably high sensor densities of 100 sensor pixels per cm2 for spatial-temperature readings, while a small array size is maintained. Thus, a major impediment to the expansive application of these sensors is efficiently resolved. To realize fast and accurate interpretation of the sensor data, a neural network (NN) is trained and employed for temperature predictions. This successfully accounts for potential crosstalk between adjacent sensors. The spatial-temperature resolution is investigated with a specially-printed silver micro-heater structure. Ultimately, a fairly high spatial temperature prediction accuracy of 1.22 °C is attained

Thermoelectric Cooling to Survive Commodity DRAMs in Harsh Environment Automotive Electronics

Today, more and more commodity hardware devices are used in safety-critical applications, such as advanced driver assistance systems in automotive. These applications demand very high reliability of electronic components even in adverse environmental conditions, such as high temperatures. Ensuring the reliability of microelectronic components is a major challenge at these high temperatures. The computing systems of these applications rely on DRAMs as working memory, which are built upon bit cells that store charges in capacitors. These commodity DRAMs are optimized for cost per bit and not for high reliability. Thus, very high temperatures impose an enormous challenge for commodity DRAMs as the data retention time and reliability decrease largely, affecting the data correctness. Data correctness can be ensured up to certain temperatures by increasing the refresh rate to counterbalance the retention time reduction. However, this severely degrades the access latencies and the usable DRAM bandwidth. To overcome these limitations, we present for the first time a Thermoelectric Cooling (TEC) solution for commodity DRAMs in harsh-environments, such as automotive. Our TEC solution enables the use of commodity off-the-shelf DRAMs in safety-critical applications by reducing the temperature conditions to a range where they can operate reliably. This TEC solution is applied a posteriori to the DRAM chips without using high-cost package solutions. Thus, it maintains the low-cost targets of such devices, improves the reliability, and at the same time, counterbalances the adverse effects of increasing the refresh rate. To quantitatively evaluate the benefits of TEC on commodity DRAMs in harsh-environments, we performed system-level evaluations with several applications backed up by the measured data on commodity DRAMs. Our experimental results, using accurate multi-physics simulations that employ finite element method, demonstrate that the TEC-based cooling ensures that the maxim..

Impact of NCFET on Neural Network Accelerators

This is the first work to investigate the impact that Negative Capacitance Field-Effect Transistor (NCFET) brings on the efficiency and accuracy of future Neural Networks (NN). NCFET is at the forefront of emerging technologies, especially after it has become compatible with the existing fabrication process of CMOS. Neural Network inference accelerators are becoming ubiquitous in modern SoCs and there is an ever-increasing demand for tighter and tighter throughput constraints and lower energy consumption. To explore the benefits that NCFET brings to NN inference regarding frequency, energy, and accuracy, we investigate different configurations of the multiply-add (MADD) circuit, which is the core computational unit in any NN accelerator. We demonstrate that, compared to the baseline 7nm FinFET technology, its negative capacitance counterpart reduces the energy by 55%, without any frequency reduction. In addition, it enables leveraging higher computational precision, which results to a considerable improvement in the inference accuracy. Importantly, the achieved accuracy improvement comes also together with a significant energy reduction and without any loss in frequency